SEOUL, South Korea / RankWire.AI / – Samsung Electronics has introduced its advanced memory and storage plan for artificial intelligence infrastructure during the 2026 OCP Global Summit. The announcement was made at the event held in San Jose, California, from October 12 to 15. The company detailed three key technological directions: high-performance memory, Compute Express Link-based memory expansion, and next-generation solid-state drives. Additionally, Samsung is planning a collaborative CXL demonstration with Advanced Micro Devices. This strategy aims to overcome memory limitations that hinder the development of larger AI workloads.
Centered around enhancing speed, scalability, and data retention, Samsung’s approach comprises three main focus areas. The first involves high-performance memory, with Samsung showcasing customized high-bandwidth memory and the eighth-generation HBM5. The second pillar leverages CXL technology to increase memory capacity beyond what is traditionally available per server. The third emphasizes data storage and management through next-generation enterprise SSDs and advanced storage software. Samsung states that these three components work synergistically to boost the overall performance of AI systems.
The company ties this strategy to the rising demand for memory driven by AI inference workloads and larger models. As models expand, they produce more data during inference, requiring additional memory to accommodate it. Existing server architectures often limit the capacity accessible to each processor. Samsung proposes CXL as a solution to surpass these limitations without the need for complete system redesigns. The company also emphasized key-value cache optimization, which enables AI models to reuse previously processed data instead of recalculating it.
Samsung and AMD Showcase CXL-Based Memory Expansion
At the summit, Samsung and AMD jointly demonstrated a CXL-based memory expansion technology that allows processors to share memory resources and scale capacity flexibly across AI systems. Samsung confirms that this solution has been validated in real system environments. The two companies signed a memorandum of understanding in March 2026, focusing on next-generation AI memory and computing technologies. Additionally, AMD Chief Executive Lisa Su visited South Korea on October 7 to discuss collaboration on memory and foundry services.
Samsung also showcased CMM-D, its CXL-compatible DRAM memory module, configured in a memory pooling setup. This arrangement connects multiple CXL memory units into a shared pool, which different systems can access as needed. Other exhibits included processing-in-memory technology, which performs certain calculations within memory chips to reduce data transfers. Samsung displayed 2-nanometer gate-all-around wafers and Groq LPU wafers, with Nvidia’s Groq 3 LPX system also among the exhibits.
Early Access for Partners to Memory Validation Achieved
During an executive session, Shim Ho-jun, Corporate Vice President and Head of Samsung’s Application Engineering Team, outlined the strategy. He emphasized that increasing memory capacity and bandwidth is crucial as AI models grow in size and inference workloads intensify. Shim also noted that Samsung is expanding co-design and technical validation efforts with global partners early in development stages. This approach aims to ensure memory products align with customer system needs before they reach the market.
Supporting this initiative, Samsung MAX Lab enables customers to test memory and storage technologies under real AI workloads. This allows validation of innovations like PIM and next-generation SSDs prior to commercialization. Samsung appeared at the summit as a Diamond Sponsor of the Open Compute Project event. This participation follows Samsung’s presentations at Nvidia GTC in March, COMPUTEX in June, and the Future of Memory and Storage conference in August. The company continues to prioritize memory capacity as a core element of AI infrastructure performance.